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  2008-04-11 1 bc817.../bc818... npn silicon af transistor ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary types: bc807.../w, bc808.../w (pnp) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package bc817-16 BC817K-16* bc817-25 bc817k-25* bc817-25w bc817k-25w* bc817-40 bc817k-40* bc817-40w bc817k-40w* bc818-16w bc818k-16w* bc818-25 bc818k-25* bc818-40 bc818k-40* 6as 6as 6bs 6bs 6bs 6bs 6cs 6cs 6cs 6cs 6es 6es 6fs 6fs 6gs 6gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - sot23 sot23 sot23 sot23 sot323 sot323 sot23 sot23 sot323 sot323 sot323 sot323 sot23 sot23 sot23 sot23 * shrinked chip version 1 pb-containing package may be available upon special request
2008-04-11 2 bc817.../bc818... maximum ratings parameter symbol value unit collector-emitter voltage bc817... bc818... v ceo 45 25 v collector-base voltage bc817... bc818... v cbo 50 30 emitter-base voltage v ebo 5 collector current i c 500 ma peak collector current i cm 1000 base current i b 100 peak base current i bm 200 total power dissipation- t s 79 c, bc817, bc818 t s 115 c, bc817k, bc818k t s 130 c, bc817w/kw, bc818...w/kw p tot 330 500 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bc817, bc818 bc817k, bc818k bc817w/kw, bc818w/kw r thjs 215 70 80 k/w 1 for calculation of r thja please refer to application note thermal resistance
2008-04-11 3 bc817.../bc818... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bc817... i c = 10 ma, i b = 0 , bc818... v (br)ceo 45 25 - - - - v collector-base breakdown voltage i c = 10 a, i e = 0 , bc817... i c = 10 a, i e = 0 , bc818... v (br)cbo 50 30 - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - v collector-base cutoff current v cb = 25 v, i e = 0 v cb = 25 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 50 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 ma, v ce = 1 v, h fe -grp.16 i c = 100 ma, v ce = 1 v, h fe -grp.25 i c = 100 ma, v ce = 1 v, h fe -grp.40 i c = 300 ma, v ce = 1 v, h fe -grp.16 2) i c = 300 ma, v ce = 1 v, h fe -grp.25 2) i c = 300 ma, v ce = 1 v, h fe -grp.40 2) i c = 500 ma, v ce = 1 v, all h fe -grps. 3) h fe 100 160 250 60 100 170 40 160 250 350 - - - - 250 400 630 - - - - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.7 v base emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 1 pulse test: t < 300s; d < 2% 2 for all bc817 and bc818 subtypes 3 for all bc817k and bc818k subtypes
2008-04-11 4 bc817.../bc818... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz 1) v cb = 10 v, f = 1 mhz 2) c cb - - 6 3 - - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz 1) v eb = 0.5 v, f = 1 mhz 2) c eb - - 60 40 - - 1 for all bc817 and bc818 subtypes 2 for all bc817k and bc818k subtypes
2008-04-11 5 bc817.../bc818... dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.16 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c dc current gain h fe = ? ( i c ) v ce = 1 v h fe -grp.40 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 a i c 1 10 2 10 3 10 h fe 105 c 85 c 65 c 25 c -40 c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 10 ehp00223 bc 817/818 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 ?c -50 25 ?c 150 ?c
2008-04-11 6 bc817.../bc818... base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 0 10 ehp00222 bc 817/818 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ?c -50 25 ?c ?c 150 collector cutoff current i cbo = ? ( t a ) v cbo = 25 v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3 transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) bc817, bc818: - - - , bc817k, bc818k: __ _ 0 2 4 6 8 10 12 14 16 v 20 v cb / v eb 0 5 10 15 20 25 30 35 40 45 50 55 60 pf 75 c cb / c eb ceb: bc817/bc818 ceb: bc817k/bc818k ccb: bc817/bc818 ccb: bc817k/bc818k
2008-04-11 7 bc817.../bc818... total power dissipation p tot = ? ( t s ) bc817, bc818: - - - , bc817k, bc818k: __ _ 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 mw 550 p tot bc817k, bc818k bc817, bc818 total power dissipation p tot = ? ( t s ) bc817w/kw, bc818w/kw 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 mw 550 p tot permissible pulse load p totmax / p totdc = ? ( t p ) bc817, bc818 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 4 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = ? ( t p ) bc817, bc818 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
2008-04-11 8 bc817.../bc818... permissible pulse load p totmax / p totdc = ? ( t p ) bc817k, bc818k 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = ? ( t p ) bc817/k, bc818/k 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 permissible puls load r thjs = ? ( t p ) bc817w/kw, bc818w/kw 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) bc817w/kw, bc818w/kw 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2008-04-11 9 bc817.../bc818... package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2008-04-11 10 bc817.../bc818... package sot323 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 0.9 12 3 a 0.2 2 -0.05 0.65 0.65 m 3x 0.1 0.1 min. 0.1 m 0.2 a 0.2 4 2.15 1.1 8 2.3 pin 1 pin 1 2005, june date code (ym) bcr108w type code 0.6 0.8 1.6 0.65 0.65 manufacturer
2008-04-11 11 bc817.../bc818... edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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